21 Dec 2020 – Weebit Nano Limited (ASX: WBT), the Israel-based semiconductor company seeking to develop and commercialise the next generation of memory technology, in conjunction with its development partner Leti, the French research institute recognised as a global leader in the field of micro-electronics, are pleased to announce that they recently filed two new patents related to Weebit Nano’s Silicon Oxide (SiOx) ReRAM technology.
The first patent defines a process improvement to enable high memory yield and high uniformity across memory cells and throughout wafer. Such methods of increasing production yield are at the cornerstone of the semiconductor fab industry, underpinning low-cost manufacturing and maximising margins and profits.
The second patent relates to the selector development with a very fast read, which enables reduced power consumption and reduced selector stress during the read operation.
Coby Hanoch, CEO of Weebit Nano, said: “Weebit is continuing to build its IP portfolio as it moves closer to first commercialisation, filing two new patents to protect our technology and enhance the IP value for our licensees. Together with our strategic partner Leti, we have filed eight patents over the past two years. The recent capital raisings support accelerated research and development that is expected to generate additional patents as we progress towards production.”
This announcement has been authorised for release by the Board of Weebit Nano Limited.
About Weebit Nano Limited
Weebit Nano is a leader in the development of next generation computer memory technology, and plans to become the new industry standard in this space. Its goal is to address the growing need for a significantly higher performance and lower power computer memory technology. Weebit Nano’s ReRAM technology is based on fab-friendly Silicon Oxide, allowing the company to rapidly execute, without the need for special equipment or preparations. The company secured several patents to ensure optimal commercial and legal protection for its ground-breaking technology.
Weebit Nano’s technology enables a quantum leap, allowing semiconductor memory elements to be significantly cheaper, faster, more reliable and more energy efficient than the existing Flash technology. Weebit Nano has signed an R&D agreement with Leti, an R&D institute that specialises in nanotechnologies, to further develop SiOx ReRAM technology.
For more information please visit: http://www.weebit-nano.com/
