Weebit ReRAM NVM in DB HiTek BCD
Silicon-Proven IP for Your Next-Generation Mixed-Signal Design
Key Benefits
- 10K cycles endurance
- >10 years retention at 125°C
- Ultra-low power consumption
- Low-cost NVM – requires only two additional masks
- Tolerant to ionizing radiation and electromagnetic interference
- Inherently secure technology
- Back-end-of-line (BEOL) technology for integration flexibility
A broad range of applications
Weebit ReRAM IP in the DB HiTek 130nm BCD process can provide advantages for a broad range of applications, including:
- Analog, power management, mixed-signal designs
- IoT, industrial, automotive applications
- Radiation-tolerant designs
- Data logging applications
Feature Specifications
| Technology | DB HiTek 130LVA 130nm |
|---|---|
| Mask Adder | 2 |
| Supply Voltage | 1.5V+/- 10% Read, 3.3V+/- 10% Program |
| Read Access Time | <25nsec |
| Operation Temp. | -40°C to 125°C |
| Capacity | 1024 Kbit (1Mb) / 512Kb / 256Kb / 128Kb / 64Kb |
| Data Bus Width (Read) | 32-bit (can be customized to 16-bit to 128-bit) |
| System Interface | AHB (can be customized QSPI or other) |
| Endurance (Write cycles) | 10K (can be extended to 100K) |
| Data Retention | >10 years @125°C |
| XiP (Execute in Place) | Special bus interface to enable firmware execution directly from the ReRAM |
| OTP | Configurable ReRAM sector for trimming and configuration bits |
DB HiTek 130nm BCDMOS Process
Based in Korea, DB HiTek is a specialized foundry with leading analog and power semiconductor technology. Its technologies run in high volume and at world-class quality levels, as demonstrated by the company’s numerous quality-driven certifications. The company’s 130nm (0.13μm) BCDMOS (Bipolar CMOS-DMOS) process is optimized to increase power efficiency and low-power performance for analog, mixed-signal, and power management designs.
DB HiTek’s 130nm technology node supports up to 120V BCDMOS in addition to CMOS 1.5V and 5V devices. It supports up to six aluminum metal layers and is mixed-signal enabled. It offers a variety of CMOS thresholds to optimize for power and performance. Learn more about DB HiTek’s BCDMOS technology.
Increase your differentiation. Reduce your risk.
ReRAM (RRAM) can provide a high level of differentiation for your design, with performance, power, cost, security, environmental, and a range of additional advantages compared to flash and other NVMs.
Weebit ReRAM IP is delivered as an embedded module with a complete set of collateral and EDA views to enable smooth integration by SoC architects using state-of-the-art EDA tools. Upon request, the module is available as part of a complete subsystem including a RISC-V microcontroller (MCU), system interfaces, Static Random-Access Memory (SRAM), and peripherals.
Weebit ReRAM technology is highly scalable and customizable by storage capacity, foundry and process node.