16 July 2020 – Weebit Nano (ASX: WBT), the next generation memory technology for the global semiconductor industry, has filed two new patents to further protect the intellectual property of its silicon oxide (SiOx) ReRAM technology.
Weebit’s latest patents define a novel selector suitable for embedded ReRAM memory applications using standard Silicon On Insulator (SOI) low-voltage transistors. These transistors offer superior scalability compared to the single, and much larger, high-voltage transistors currently being used as a selector in embedded ReRAM arrays. The use of SOI transistors dramatically decreases the size of the selector, enabling production of smaller, lower-cost embedded memory modules.
Coby Hanoch, CEO of Weebit Nano, said: “Weebit is constantly looking for ways to enhance its next-generation ReRAM memory technology as it nears productisation. Reducing the memory cell size has been a key area of focus for the Company, as a smaller memory array lowers the cost of production and makes it more attractive to potential customers. Analysis of production fabs shows that many leading fabs use SOI wafers, further justifying the transition to low-voltage transistors.”
This patent complements the six patents filed by Weebit Nano last year, five of which were joint patents filed together with its partner, Leti.
This announcement has been authorised for release by the Board.
About Weebit Nano Limited
Weebit Nano is a leader in the development of next generation computer memory technology, and plans to become the new industry standard in this space. Its goal is to address the growing need for a significantly higher performance and lower power computer memory technology. Weebit Nano’s ReRAM technology is based on fab-friendly Silicon Oxide, allowing the company to rapidly execute, without the need for special equipment or preparations. The company secured several patents to ensure optimal commercial and legal protection for its ground-breaking technology.
Weebit Nano’s technology enables a quantum leap, allowing semiconductor memory elements to be significantly cheaper, faster, more reliable and more energy efficient than the existing Flash technology. Weebit Nano has signed an R&D agreement with Leti, an R&D institute that specialises in nanotechnologies, to further develop SiOx ReRAM technology.
For more information please visit: http://www.weebit-nano.com/
