Dec, 19

Weebit Nano and Leti file three new patents for improved yield and reliability of advanced ReRAM products

6 December 2019 – Weebit Nano (ASX: WBT), the next generation memory technology for the global semiconductor industry, and its development partner Leti, the French research institute recognised as a global leader in the field of micro-electronics, have filed three new patents for Weebit’s Silicon Oxide (SiOx) ReRAM technology.

The latest patents from Weebit and Leti use newly developed smart algorithms to increase the reliability and yield of ReRAM memory cells and enable scalable immune ReRAM process improvements. Two patents identify failure modes, in which optimised smart programming algorithms then improve the window margin and array yield. The third patent improves process flows, allowing increased stability at scaled memory cells in geometries of 40nm and below.

These patents outline methods to overcome issues that stem from physical limitations, which are common in advanced geometries approaching atomic-level limitations, resulting in increased yield and ultimately revenues per wafer.

Coby Hanoch, CEO of Weebit Nano, said: “Developing disruptive technology for productisation is not only a result of great material science engineering, but also understanding and controlling the physics of the device. A company needs to develop sophisticated process flow techniques as well as smart algorithms to overcome challenges and control the physics of the manufacturing environment. Weebit and Leti invest on both fronts to create unique know-how that will enable simpler and lower-cost manufacturability, resulting in highly reliable and cost-effective ReRAM memory solutions.

“These patents further fortify Weebit’s intellectual property and create a unique package of process and memory control that will be incorporated in our future products, enabling us to increase the potential revenues from each wafer produced,” said Mr Hanoch.

Weebit Nano continues to refine its ReRAM technology in partnership with Leti, in order to ensure it is highly attractive to potential customers. The Company remains on track to transfer its technology to a production fab by December 2020, and is continuing developments with a number of potential customers.

This announcement has been authorised for release by the Board.

About Weebit Nano Limited

Weebit Nano is a leader in the development of next generation computer memory technology, and plans to become the new industry standard in this space. Its goal is to address the growing need for a significantly higher performance and lower power computer memory technology. Weebit Nano’s ReRAM technology is based on fab-friendly Silicon Oxide, allowing the company to rapidly execute, without the need for special equipment or preparations. The company secured several patents to ensure optimal commercial and legal protection for its ground-breaking technology.

Weebit Nano’s technology enables a quantum leap, allowing semiconductor memory elements to be significantly cheaper, faster, more reliable and more energy efficient than the existing Flash technology. Weebit Nano has signed an R&D agreement with Leti, an R&D institute that specialises in nanotechnologies, to further develop SiOx ReRAM technology.

For more information please visit: http://www.weebit-nano.com/

Media Contacts:

Eric Kuret, Market Eye
P: +61 417 311 335
E: [email protected]

Media – Australia
Tristan Everett, Market Eye
P: +61 403 789 096
E: [email protected]


Media – US
Jen Bernier-Santarini, Weebit Nano
P: +1 650-336-4222
E: [email protected]