Weebit Nano, a developer of next-generation semiconductor memory technologies, has completed the design and verification stages of its embedded ReRAM module.

Weebit Nano has completed the design and verification stages of its embedded ReRAM module, and taped-out a test-chip that integrates this module.

Weebit Nano, an emerging memory startup announced that it has integrated an oxide-based ReRAM (OxRAM) memory cell with an ovonic threshold switching (OTS) selector, created with its development partner, CEA-Leti.

This achievement is a significant step towards broadening Weebit’s target market beyond embedded non-volatile memory (NVM) to include discrete memory technology, and will enable the implementation of 3D memory stacking and crossbar architectures in future developments.

Weebit Nano’s (ASX:WBT) Coby Hanoch speaks to Proactive’s Andrew Scott soon after announcing a key technology milestone – the first commercial integration of an oxide-based ReRAM (OxRAM) cell with an ovonic threshold switching (OTS) selector.

Demonstrating what is believed to be the industry’s first commercial integration of an ovonic threshold switching (OTS) selector with an oxide-based ReRAM cell, Weebit Nano says it is a significant step in the implementation of 3D memory stacking and crossbar architectures in future developments.

Israel-based RRAM developer Weebit Nano announced that it has developed the world’s first commercial integration of an oxide-based ReRAM (OxRAM) cell with an ovonic threshold switching (OTS) selector.

Weebit and its development partner CEA-Leti achieved this key milestone three months ahead of Weebit’s previously announced schedule.

Recently, Weebit Nano Ltd filed a patent describing new technologies in the field of ReRAM. So what is ReRAM, what does the patent describe, and how can ReRAM help with memory technologies of the future?

Weebit Nano (WBT) spent the March quarter chasing its first commercial agreement and making progress on its embedded memory module.