Both ReRAM (RRAM) and Magnetic random-access memory (MRAM) are a types of non-volatile memory (NVM) but they use different switching mechanisms. MRAM stores data by changing the magnetic orientation of layers within a magnetic stack, while ReRAM stores data by forming or rupturing a conductive filament in a resistive material. MRAM integration typically requires specialized magnetic materials and additional process complexity, whereas oxide-based ReRAM can be integrated using standard CMOS-compatible materials in the back end of line (BEOL).