ReRAM (resistive RAM, also called RRAM) is a non-volatile, extremely fast, low-power and cost-effective non-volatile memory (NVM) technology that can endure a significantly higher number of Program/Erase cycles than flash memory. The Weebit oxide-based ReRAM (OxRAM) cell is comprised of a thin oxide switching layer between two electrodes. Resistance can be programmed using electric voltage.
Read more about ReRAM in our Guide to ReRAM.
