ReRAM (RRAM) is a non-volatile memory (NVM) technology that stores data by changing the resistance of a memory cell. All types of ReRAM are known for their high performance, low power consumption, and ability to scale to advanced processes. The differences are generally in terms of their switching mechanisms and materials, which can translate to differences in complexity and cost. Weebit ReRAM is an Oxide-based ReRAM (OxRAM) that uses a thin metal oxide film to form a conductive filament between two electrodes. It is based on the materials commonly used in semiconductor manufacturing today, so it is easy and inexpensive to adopt and integrate. Conductive bridging RAM (CBRAM) is a different type of ReRAM that uses metal ions in solid electrolytes to form/dissolve conductive filaments. Some of the materials commonly used in CBRAM, like silver, can be expensive and require special handling.