The answer depends on your target process node and application requirements. Embedded flash does not scale effectively below 28nm, while ReRAM (RRAM) integrates in the back end of line (BEOL), preserving front-end analog performance and enabling advanced-node designs. Compared with flash, ReRAM typically requires fewer masks, supports lower power operation, and enables faster programming. Versus MRAM, ReRAM integrates using standard CMOS materials and flows, reducing process complexity and wafer cost for embedded applications.