Weebit’s oxide-based ReRAM (OxRAM) cell consists of a metal oxide switching layer between two electrodes. An initial forming step creates a conductive filament. Applying voltage pulses forms or ruptures this filament, switching the cell between a Low Resistive State (LRS) and High Resistive State (HRS) to store binary data. Because data is stored as resistance rather than charge, ReRAM (RRAM) can scale beyond the limits of embedded flash (eFlash). You can read more about how Weebit ReRAM works on our Technology page.
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