MRAM and ReRAM are both non-volatile memories — they retain data without power — but they store it differently. ReRAM (RRAM) switches the resistance of an oxide layer; MRAM switches the magnetic orientation of a magnetic tunnel junction built from roughly eleven thin-film layers. That structural difference drives most of the practical trade-offs in cost, process integration, and application fit.
The cost gap is significant: Weebit ReRAM adds around 10% to wafer cost using standard CMOS-compatible materials with no contamination risk, while MRAM adds 30–50%, requires a dedicated or split-fab arrangement, and carries contamination risk from its magnetic materials.
MRAM’s advantage is endurance — up to 108 cycles against ReRAM’s 105–10⁶ — and it needs a slightly lower write voltage. Beyond its cost advantage, Weebit ReRAM’s advantages are EMI immunity, which MRAM lacks and which rules MRAM out of many smartcard, automotive-security, and medical applications, and better reliability above 125°C, where MRAM faces known thermal-stability challenges. Where enhanced endurance beyond a million cycles is the priority, MRAM may be a good fit; where cost, integration simplicity, EMI immunity, or high-temperature operation matter, ReRAM is the stronger option.